PART |
Description |
Maker |
GS840E36AGT-180I |
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 128K X 36 CACHE SRAM, 8 ns, PQFP100
|
GSI Technology, Inc.
|
E28F002BX-B80 E28F002BX-T60 E28F002BX-T80 E28F002B |
5V or Adjustable, Low-Voltage, Step-Up DC-DC Controller 28F200BX - B 2兆位28K的1656K × 8)启动块闪存系列 ACTUATOR, SWITCH, ROUND, LATCH; Approval Bodies:BEAB, VDE, UL, CSA; Diameter, external:29mm; IP rating:65; Operations, mechanical No. of:100000; Temp, op. max:85(degree C); Temp, op. min:-20(degree C) RoHS Compliant: Yes 28F002BX-B - 2-MBIT (128K x 16. 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY 2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY 2-MBIT (128K x 16 / 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY 2-MBIT (128K x 16/ 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
|
http:// Intel, Corp. PROM Intel Corp. Intel Corporation
|
256KX18 128KX36 IS61NVP25618A IS61NLP12832B-200B2 |
128K x 32, 128K x 36, and 256K x 18 STATE BUS SRAM 128K X 36 ZBT SRAM, 2.6 ns, PBGA119 14 X 22 MM, 1 MM PITCH, PLASTIC, BGA-119 128K X 36 ZBT SRAM, 2.6 ns, PBGA165 13 X 15 MM, 1 MM PITCH, PLASTIC, BGA-165 128K X 36 ZBT SRAM, 2.6 ns, PQFP100 TQFP-100 128K X 36 ZBT SRAM, 3.1 ns, PBGA119 14 X 22 MM, 1 MM PITCH, PLASTIC, BGA-119 128K X 36 ZBT SRAM, 3.1 ns, PBGA165 13 X 15 MM, 1 MM PITCH, PLASTIC, BGA-165 128K x 32, 128K x 36, and 256K x 18 4Mb, PIPELINE (NO WAIT) STATE BUS SRAM 256K X 18 ZBT SRAM, 3.1 ns, PBGA119 128K x 32, 128K x 36, and 256K x 18 4Mb, PIPELINE (NO WAIT) STATE BUS SRAM 256K X 18 ZBT SRAM, 3.1 ns, PQFP100
|
天津新技术产业园区管理委员会 Integrated Silicon Solution, Inc. Integrated Silicon Solu...
|
IS61NLP25618A IS61NLP25618A-200B3 IS61NLP25618A-20 |
128K x 32, 128K x 36, and 256K x 18 4Mb, PIPELINE (NO WAIT) STATE BUS SRAM
|
Integrated Silicon Solu...
|
CY7C0833AV CY7C0833AV-100BBC CY7C0833AV-100BBI CY7 |
FLEx18⑩ 3.3V 64K/128K x 36 and 128K/256K x 18 Synchronous Dual-Port RAM
|
Cypress Semiconductor
|
IS61LF25618A-7.5TQLI |
128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
|
Integrated Silicon Solu...
|
LH532600 LH532600N LH532600D LH532600T LH532600TR |
CMOS 2M(256K X 8/128K X 16) Mask-Programmable ROM CMOS 2M (256K x 8/128K x 16) MROM
|
SHARP[Sharp Electrionic Components] Sharp Corporation
|
GS840F18AGT-7.5I GS840F36AGT-7.5I |
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 256K X 18 CACHE SRAM, 7.5 ns, PQFP100 256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 128K X 36 CACHE SRAM, 7.5 ns, PQFP100
|
GSI Technology, Inc.
|
AM29F200BB55EI AM29F200BT-90SI AM29F200BT-55EC AM2 |
2 Mb (256K x 8, 128K x 16) Boot Sector, Flash Memory 256K X 8 FLASH 5V PROM, 55 ns, PDSO48 FLASH 128K X 16 TSOP-48
|
Advanced Micro Devices, Inc. ADVANCED MICRO DEVICES INC
|
CYD02S36V CYD04S36V CYD09S36V CYD18S36V |
FLEx36TM 3.3V 32K/64K/128K/256K/512 x 36 Synchronous Dual-Port RAM(FLEx36TM 3.3V 32K/64K/128K/256K/512 x 36同步双端口RAM) FLEx36TM 3.3 32K/64K/128K/256K/512 × 36同步双口RAM(FLEx36TM 3.3 32K/64K/128K/256K/512 × 36同步双端口RAM)的
|
Cypress Semiconductor Corp.
|
25C256 CAT25C256 25C128 CAT25C128 CAT25C256S16-1.8 |
256K SPI serial CMOS EEPROM 1.8-6.0V 128K SPI serial CMOS EEPROM 2.5-6.0V SPI Serial EEPROM SPI串行EEPROM 128K/256K-BitSPISerialCMOSE2PROM 64K 8K x 8 Battery-Voltage CMOS E2PROM 64KK的8电池电压的CMOS E2PROM 128K SPI serial CMOS EEPROM 1.8-6.0V 256K SPI serial CMOS EEPROM 2.5-6.0V 128K/256K-Bit SPI Serial CMOS E2PROM
|
http:// STMicroelectronics N.V. Semtech, Corp. Abracon, Corp. CatalystSemiconductor CATALYST[Catalyst Semiconductor]
|
CY7C0851V |
FLEx36TM 3.3V 32K/64K/128K/256K x 36 Synchronous Dual-Port RAM(FLEx36TM 3.3V 32K/64K/128K/256K x 36同步双端口RAM)
|
Cypress Semiconductor Corp.
|